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Journal of Vacuum Science & Technology B
Journal of Vacuum Science & Technology B emphasizes processing, measurement and phenomena associated with micrometer and nanometer structures and devices. Processing may include vacuum processing, plasma processing and microlithography among others, while measurement refers to a wide range of materials and device characterization methods for understanding the physics and chemistry of submicron and nanometer structures and devices.
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In a little over a year, there has been an unexpected breakthrough and rapid evolution of highly efficient solid-state hybrid solar cells based on organometal trihalide perovskite materials. This technology has the potential to produce solar cells with the very highest efficiencies while retaining the very lowest cost. The authors have measured the electronic density of states of CH3NH3PbI3 using ultraviolet photoemission spectroscopy (UPS), inverse photoemission spectroscopy (IPES), and x-ray photoemission spectroscopy
(XPS). The valence band maximum and conduction band minimum positions are obtained from the UPS and IPES spectra, respectively, by linear extrapolation of the leading edges. The authors investigate the Au/perovskite and C60/perovskite interfaces by UPS and XPS. An interface dipole of 0.1 eV is observed at Au/perovskite interface. The energy levels of perovskite shift upward by ca.0.4 eV with Au coverage of 64 ? upon it, resulting in band bending, hence a built-in field in perovskite that encourages hole transport to the interface. The XPS results show a strong initial shift of core levels to lower binding energy in the perovskite, which indicates that electrons transfer from the perovskite
film to fullerene molecules. Further deposition of fullerene forms C60 solid, accompanied by the reduction of the electron transfer. The strongest electron transfer happened at 1/4 monolayer of fullerene.
Large-scale fabrication of a
three-dimensional photonic crystal with simple cubic (SC) geometry was demonstrated using semiconductor-processing techniques in a layer-by-layer method. Full exposure of 100 mm double-side polished silicon and fused silica wafers was performed using deep-UV projection lithography with a 1
field size, and a four-layer
crystal of lattice pitch
nm was successfully realized. The authors have computed the iso-frequency surfaces (IFS) for this structure and for another, which is to be examined in a future work. The latter will consist of a
SC photonic crystal for which the air regions are filled in with luminescent material of refractive index
. The IFS indicate that our
photonic crystal is capable of supporting parallel-to-interface refraction modes for normalized frequency as high as
, and that these modes will persist should the dielectric contrast be lowered via infiltration of the air region. For characterization, integrating sphere reflection measurements were performed, and the results are compared with those obtained from finite-difference time-domain simulation.
The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of EUV mask defects. In this work, two native mask blank defects were characterized using atomic force microscopy
(AFM) and cross-section transmission electron microscopy
(TEM), and the defect printability of the characterized native mask defects was evaluated using simulations implementing the finite-difference time-domain and the waveguide algorithms. The simulation results were compared with through-focus aerial images obtained at the SEMATECH Berkeley Actinic Inspection Tool (AIT), an EUV mask-imaging microscope at Lawrence Berkeley National Laboratory. The authors found agreement between the through-focus simulation results and the AIT results. To model the Mo/Si multilayer growth over the native defects, which served as the input for the defect printability simulations, a level-set technique was used to predict the evolution of the multilayer disruption over the defect. Unlike other models that assume a constant flux of atoms (of materials to be deposited) coming from a single direction, this model took into account the direction and incident fluxes of the materials to be deposited, as well as the rotation of the mask substrate, to accurately simulate the actual deposition conditions existing inside the ion beam deposition tool. The modeled multilayer growth was compared to the cross-section TEM images through the defects, as well as to the AFM scans for the given defects, and a good agreement was observed between them.
The fabrication process for a long-range surface plasmon polariton hydrogen sensor is presented. The device, referred to as the cladded membrane waveguide, features a 5 μm wide and 20 nm thick gold stripe embedded in a 160 nm free standing Cytop membrane. Broadside excitation and output are achieved with integrated grating couplers. Hydrogen sensitivity is provided by an overlaid 5 nm thick palladium patch, which acts as a transduction medium. The device is fabricated by integrating several process techniques including blind through-wafer alignment, optical photolithography, overlaid electron beam lithography, metal lift-off, and through-substrate silicon wet etching. Fabricated results are presented along with a detailed discussion. The devices are characterized optically via a cutback measurement with the measured waveguide attenuation being consistent with simulated values.
<img src="/docserver/fulltext/jvb_33_02b110.jpg"
alt="Defect-mediated transport and electronic irradiation effect in individual domains of CVD-grown monolayer MoS2"
title="Defect-mediated transport and electronic irradiation effect in individual domains of CVD-grown monolayer MoS2" />
The authors study the electrical transport properties of atomically thin individual crystalline grains of MoS2 with four-probe scanning tunneling microscopy. The monolayer MoS2 domains are synthesized by chemical vapor deposition on SiO2/Si substrate. Temperature dependent measurements on conductance and mobility show that transport is dominated by an electron charge trapping and thermal release process with very low carrier density and mobility. The effects of electronic irradiation are examined by exposing the film to electron beam in the scanning electron microscope in an ultrahigh vacuum environment. The irradiation process is found to significantly affect the mobility and the carrier density of the material, with the conductance showing a peculiar time-dependent relaxation behavior. It is suggested that the presence of defects in active MoS2 layer and dielectric layer create charge trapping sites, and a multiple trapping and thermal release process dictates the transport and mobility characteristics. The electron beam
irradiation promotes the formation of defects and impact the electrical properties of MoS2. Our study reveals the important roles of defects and the electron beam
irradiation effects in the electronic properties of atomic layers of MoS2.
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Conductance fluctuations in graphene
nanoribbons with a disordered, short-range potential are numerically studied. The authors carry out Fermi energy sweeps at different magnetic fields and magnetic field sweeps at a fixed Fermi energy to examine whether universality and ergodicity hold in graphene. The authors find that there is no universality of the fluctuations. The amplitude of fluctuations has a dependence on disorder strength. Further, Fermi energy sweeps have stronger fluctuation amplitudes than magnetic field sweeps, demonstrating a lack of ergodicity. In addition, the magnetic field does not significantly affect the fluctuation amplitude of Fermi energy sweeps.
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In this report, the authors investigate the use of H2/Ar-plasma exposure as a means for achieving high-quality electrical interfaces between p-type GaSb and atomic-layer-deposited Al2O3
dielectric films. Dry in-situ
plasma treatments are shown to reduce the estimated density of interface states by over two orders of magnitude compared to a standard wet HCl-treatment, without increasing gate leakage. The chemical compositions of the natively oxidized and treated
surfaces are analyzed via x-ray photoemission spectroscopy
XPS spectra indicate that the native GaSb oxide is segregated, with Sb-oxide compounds localized at the air interface. Effective H2/Ar-plasma treatments act to remove the Sb-oxide, resulting in a surface Ga-oxide layer enriched in Ga2O3.
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Scitation: Journal of Vacuum Science & Technology B: Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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